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| SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -500 -800 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Storage time Fall time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -10mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz 100 200 5.6 0.15 0.8 -60 -50 -5 70 VCC = 20V, IC = -10IB1 = -10IB2 = 100mA 400 50 0.4 1.2 Min Typ Max -0.1 -0.1 560 MHz pF V V V V V ns ns ns Unit iA iA VCE(sat) IC = -100mA , IB =-10mA VBE(sat) IC = -100mA , IB =-10mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -100iA , RBE = V(BR)EBO IE = -10iA , IC = 0 ton tstg tf hFE Classification Marking Rank hFE 100 4 200 5 140 280 AL 6 200 400 7 280 560 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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